| Presentation | 2012-11-30 Nitride semiconductor np-LEDs for improvement of efficiency droop Takatoshi MORITA, Mitsuru KAGA, Yuka KUWANO, Kenjo MATSUI, Tetsuya TAKEUCHI, Satoshi KAMIYAMA, Motoaki IWAYA, Isamu AKASAKI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A decrease of external quantum efficiency with an increase of injection current in nitride semiconductor LEDs, a so-called efficiency droop, has been an issue. We have been developing an np-junction LED consisting of a reversed layer structure of a conventional pn-junction LED in order to reduce the droop. In this report, our theoretical calculation indicated that carrier overflow was suppressed in the np-junction LEDs. In addition, the np-junction LED was designed and fabricated with a tunnel junction. We then achieved uniform emission from the np-junction LED. At the same time, an increase of driving voltage and a decrease of light output power were observed compared to those of the conventional pn-junction LED. An insufficient Mg concentration at the tunnel junction and an unintentional Mg incorporation at the active region are the reasons for poor device performances. A suppression of the droop will be expected by further improvement of the np-junction LEDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | np-junction LED / efficiency droop / tunnel junction / built-in electric field / Mg concentration / GaN |
| Paper # | ED2012-79,CPM2012-136,LQE2012-107 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nitride semiconductor np-LEDs for improvement of efficiency droop |
| Sub Title (in English) | |
| Keyword(1) | np-junction LED |
| Keyword(2) | efficiency droop |
| Keyword(3) | tunnel junction |
| Keyword(4) | built-in electric field |
| Keyword(5) | Mg concentration |
| Keyword(6) | GaN |
| 1st Author's Name | Takatoshi MORITA |
| 1st Author's Affiliation | Fac. Sci. & Eng., Meijo University() |
| 2nd Author's Name | Mitsuru KAGA |
| 2nd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 3rd Author's Name | Yuka KUWANO |
| 3rd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 4th Author's Name | Kenjo MATSUI |
| 4th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 5th Author's Name | Tetsuya TAKEUCHI |
| 5th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 6th Author's Name | Satoshi KAMIYAMA |
| 6th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 7th Author's Name | Motoaki IWAYA |
| 7th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 8th Author's Name | Isamu AKASAKI |
| 8th Author's Affiliation | Fac. Sci. & Eng., Meijo University:Grad. Sch. of Eng., Nagoya University |
| Date | 2012-11-30 |
| Paper # | ED2012-79,CPM2012-136,LQE2012-107 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |