Presentation 2012-11-30
Selective MOVPE growth on nonpolar GaN substrates
D. JINNO, S. OKADA, H. MIYAKE, K. HIRAMATSU, Y. ENATSU, S. NAGAO,
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Abstract(in English) The selective-area growth (SAG) on nonpolar (10-10)(20-21)(20-2-1) GaN substrates by MOVPE was demonstrated, and the facet structures were investigated. The different structures depending on the SiO_2-mask stripe directions were observed. Anisotropic structures with (000-1) and (10-11) facets were obtained for all of the nonpolar GaN substrates along the [-12-10] direction. On the other hand, {11-20} and (20-2-1) facets appeared for SAG on the (20-21) GaN and (20-2-1) GaN substrates with SiO_2 mask along the [-1014] and [10-14] directions, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) nonpolar / GaN / MOVPE / selective area growth / facet
Paper # ED2012-77,CPM2012-134,LQE2012-105
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Committee ED
Conference Date 2012/11/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Selective MOVPE growth on nonpolar GaN substrates
Sub Title (in English)
Keyword(1) nonpolar
Keyword(2) GaN
Keyword(3) MOVPE
Keyword(4) selective area growth
Keyword(5) facet
1st Author's Name D. JINNO
1st Author's Affiliation Mie University()
2nd Author's Name S. OKADA
2nd Author's Affiliation Mie University
3rd Author's Name H. MIYAKE
3rd Author's Affiliation Mie University
4th Author's Name K. HIRAMATSU
4th Author's Affiliation Mie University
5th Author's Name Y. ENATSU
5th Author's Affiliation Mitsubishi Chemical Corporation
6th Author's Name S. NAGAO
6th Author's Affiliation Mitsubishi Chemical Group Science and Technology Research Center Inc.
Date 2012-11-30
Paper # ED2012-77,CPM2012-134,LQE2012-105
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue