| Presentation | 2012-11-29 Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir HASAN, Hirokuni TOKUDA, Masaaki KUZUHARA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed higher values at pulsed conditions as compared with DC for SiN passivation, and vice versa for Al_2O_3, SiO_2 and without passivation. The drain current decreased with increasing the on-state time for SiN, which indicated that the most probable location of trap was at the AlGaN layer beneath the gate. Increasing tendency of drain current with increasing on-state time indicated that the surface traps were dominant for this behavior, which was the case for Al_2O_3, SiO_2, and without passivation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMTs / current dispersion / passivation / pulsed IV system |
| Paper # | ED2012-76,CPM2012-133,LQE2012-104 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMTs |
| Keyword(2) | current dispersion |
| Keyword(3) | passivation |
| Keyword(4) | pulsed IV system |
| 1st Author's Name | Md. Tanvir HASAN |
| 1st Author's Affiliation | Graduate School of Engineering, University of Fukui() |
| 2nd Author's Name | Hirokuni TOKUDA |
| 2nd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| 3rd Author's Name | Masaaki KUZUHARA |
| 3rd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| Date | 2012-11-29 |
| Paper # | ED2012-76,CPM2012-133,LQE2012-104 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |