Presentation 2012-11-27
Low Power Reconfiguarable Accelerator Design with Sillicon on Thin Buried Oxide
Hongliang SU, Weihan WANG, Hideharu AMANO,
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Abstract(in English) Nowadays, from battery supplied mobile devices to supercomputers, reducing the power consumption has become a serious design issue. Although using low power supply is the most efficient way to reduce the power, it also increases the leakage power and delay varience. Low-power Electronics Association & Project (LEAP) developed Silicon On Thin Buried Oxide (SOTB) technology in order to solve those problems. Since the SOTB employs fully depleted silicon-on-insulator (FD-SOI) CMOSFET, not only floating-body effects but also bias of threshold voltage can be suppressed. We developed a new reconfigurable accelerator Cool Mega Array (CMASOTB) to verify the SOTB technology. CMASOTB works with 50MHz operating frequency and 0.4V operating voltage. The evaluation results show that the power consumption of CMASOTB is 74% lower than that of CMA-1 which is implemented using a common bulk device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Sillicon on Thin Buried Oxide CMOSFET / accelerator / low V_
/ low power consumption
Paper # RECONF2012-47
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Conference Information
Committee RECONF
Conference Date 2012/11/20(1days)
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Paper Information
Registration To Reconfigurable Systems (RECONF)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Power Reconfiguarable Accelerator Design with Sillicon on Thin Buried Oxide
Sub Title (in English)
Keyword(1) Sillicon on Thin Buried Oxide CMOSFET
Keyword(2) accelerator
Keyword(3) low V_
Keyword(4) low power consumption
1st Author's Name Hongliang SU
1st Author's Affiliation Faculty of science and Technology, Keio University()
2nd Author's Name Weihan WANG
2nd Author's Affiliation Faculty of science and Technology, Keio University
3rd Author's Name Hideharu AMANO
3rd Author's Affiliation Faculty of science and Technology, Keio University
Date 2012-11-27
Paper # RECONF2012-47
Volume (vol) vol.112
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue