| Presentation | 2012-11-29 Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin HORI, Zenji YATABE, Wan-cheng MA, Tamotsu HASHIZUME, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have characterized effects of process conditions on Al_2O_3/AlGaN/GaN hetero-MOS structures prepared by atomic layer deposition. A SiN surface protection layer suppressed nitrogen-vacancy-related chemical disorder at the AlGaN surface even during high-temperature annealing, resulting in reduction of the Al_2O_3/AlGaN interface states. Photo-assisted C-V characteristics of the Al_2O_3/AlGaN/GaN structures indicated that an N_2O-radical treatment was also effective in reducing the Al_2O_3/AlGaN interface states. The N_2O-radical treated MOS-HEMT showed the improvement of transfer characteristics in the positive bias range, probably due to reduction of the Al_2O_3/AlGaN interface states. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / Al_2O_3 / MOS / HEMT / Interface state |
| Paper # | ED2012-74,CPM2012-131,LQE2012-102 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of process conditions on AlGaN/GaN hetero-MOS structures |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | Al_2O_3 |
| Keyword(3) | MOS |
| Keyword(4) | HEMT |
| Keyword(5) | Interface state |
| 1st Author's Name | Yujin HORI |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Zenji YATABE |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Wan-cheng MA |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:JST-CREST |
| Date | 2012-11-29 |
| Paper # | ED2012-74,CPM2012-131,LQE2012-102 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |