| Presentation | 2012-11-29 Electrical characteristics of MIS-diodes with Al_2O_3 deposited by ALD on GaN Yasuhiro IWATA, Toshiharu KUBO, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We focused Al_2O_3 as an insulator in MIS structures. MIS-diodes were fabricated with Al_2O_3 deposited by ALD on GaN at 200℃, 250℃ and 300℃, and their electrical characteristics were evaluated. H_2O or O_3 or both of them were used as an oxygen precursor. The leakage current was suppressed by Al_2O_3 deposition, and the smallest threshold voltage shift was observed with the Al_2O_3 deposited by O_3 at 300℃ when using H_2O or O_3. Further the oxide charge in Al_2O_3 deposited by both H_2O and O_3 alternately was smaller than that Al_2O_3 deposited by H_2O or O_3. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS-diodes / ALD / insulator / interface |
| Paper # | ED2012-73,CPM2012-130,LQE2012-101 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characteristics of MIS-diodes with Al_2O_3 deposited by ALD on GaN |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS-diodes |
| Keyword(3) | ALD |
| Keyword(4) | insulator |
| Keyword(5) | interface |
| 1st Author's Name | Yasuhiro IWATA |
| 1st Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology() |
| 2nd Author's Name | Toshiharu KUBO |
| 2nd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| Date | 2012-11-29 |
| Paper # | ED2012-73,CPM2012-130,LQE2012-101 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |