| Presentation | 2012-11-29 Evaluation of transient current of GaN HEMTs on Si under light Takuya JOKA, Akio WAKEJIMA, Takashi EGAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We evaluated a transient response of a drain current (I_d(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiation to investigate effect of the light on a current collapse. From the dependence of a wavelength, as a shorter wavelength light down to 300nm was irradiated, earlier recovery of I_d(t) was observed. However, the recovery under 260-nm light irradiation was delayed comparing to that under 300-nmlight irradiation. Moreover, we observed that I_d(t) abruptly fell down when the light was turned off during I_d(t) measurement. Moreover, I_d(t) continued to decrease. From this result, we believe that light irradiation induces pseudo-recovery of I_d(t). The abrupt decrease in I_d(t) at light-off can be explained by assumption that excess energy of light irradiation inverses correlation between intrinsic and pseudo Fermi level. However, this model is insufficient to explain continuous decrease in I_d(t) after light-off. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / Current collapse / Light irradiation |
| Paper # | ED2012-72,CPM2012-129,LQE2012-100 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of transient current of GaN HEMTs on Si under light |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | Current collapse |
| Keyword(4) | Light irradiation |
| 1st Author's Name | Takuya JOKA |
| 1st Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology() |
| 2nd Author's Name | Akio WAKEJIMA |
| 2nd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| Date | 2012-11-29 |
| Paper # | ED2012-72,CPM2012-129,LQE2012-100 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |