| Presentation | 2012-11-29 Pt/β-Ga_2O_3 Schottky Barrier Diodes Using Single-Crystal β-Ga_2O_3 Substrates Kohei SASAKI, Masataka HIGASHIWAKI, Akito KURAMATA, Takekazu MASUI, Shigenobu YAMAKOSHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated gallium oxide (Ga_2O_3) Schottky barrier diodes using β-Ga_2O_3 (010) single crystal substrates produced by the floating zone. The crystal quality of the substrates was excellent; the X-ray diffraction rocking curve peak had a full width at half maximum of 32 arcsec, and the etch pit density was less than 1×10^4cm^<-2>. The devices exhibited good characteristics, such as an ideality factor close to the unity and a reasonably high reverse breakdown voltage of about 150V. The Schottky barrier height of the Pt/β-Ga_2O_3 interface was estimated to be 1.3-1.5eV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ga_2O_3 / Gallium Oxide / Schottky Barrier Diode / Shottky Barrier Height |
| Paper # | ED2012-71,CPM2012-128,LQE2012-99 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Pt/β-Ga_2O_3 Schottky Barrier Diodes Using Single-Crystal β-Ga_2O_3 Substrates |
| Sub Title (in English) | |
| Keyword(1) | Ga_2O_3 |
| Keyword(2) | Gallium Oxide |
| Keyword(3) | Schottky Barrier Diode |
| Keyword(4) | Shottky Barrier Height |
| 1st Author's Name | Kohei SASAKI |
| 1st Author's Affiliation | TAMURA Corporation:National Institute of Information and Communications Technology() |
| 2nd Author's Name | Masataka HIGASHIWAKI |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology:PRESTO, Japan Science and Technology Agency (JST) |
| 3rd Author's Name | Akito KURAMATA |
| 3rd Author's Affiliation | TAMURA Corporation |
| 4th Author's Name | Takekazu MASUI |
| 4th Author's Affiliation | Koha Co., Ltd. |
| 5th Author's Name | Shigenobu YAMAKOSHI |
| 5th Author's Affiliation | TAMURA Corporation |
| Date | 2012-11-29 |
| Paper # | ED2012-71,CPM2012-128,LQE2012-99 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |