Presentation 2012-11-29
Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki WATANABE, Haruki YOKOYAMA, Naoteru SHIGEKAWA,
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Abstract(in English) We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.
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Keyword(in English) tunneling junction / polarization effect / GaN / AlGaN / negative-differential resistance
Paper # ED2012-70,CPM2012-127,LQE2012-98
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Committee ED
Conference Date 2012/11/22(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Sub Title (in English)
Keyword(1) tunneling junction
Keyword(2) polarization effect
Keyword(3) GaN
Keyword(4) AlGaN
Keyword(5) negative-differential resistance
1st Author's Name Noriyuki WATANABE
1st Author's Affiliation NTT Photonics Laboratories, NTT corporation()
2nd Author's Name Haruki YOKOYAMA
2nd Author's Affiliation NTT Photonics Laboratories, NTT corporation
3rd Author's Name Naoteru SHIGEKAWA
3rd Author's Affiliation Graduate School of Engineering, Osaka City University
Date 2012-11-29
Paper # ED2012-70,CPM2012-127,LQE2012-98
Volume (vol) vol.112
Number (no) 327
Page pp.pp.-
#Pages 4
Date of Issue