Presentation | 2012-11-29 Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki WATANABE, Haruki YOKOYAMA, Naoteru SHIGEKAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | tunneling junction / polarization effect / GaN / AlGaN / negative-differential resistance |
Paper # | ED2012-70,CPM2012-127,LQE2012-98 |
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Committee | ED |
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Conference Date | 2012/11/22(1days) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction |
Sub Title (in English) | |
Keyword(1) | tunneling junction |
Keyword(2) | polarization effect |
Keyword(3) | GaN |
Keyword(4) | AlGaN |
Keyword(5) | negative-differential resistance |
1st Author's Name | Noriyuki WATANABE |
1st Author's Affiliation | NTT Photonics Laboratories, NTT corporation() |
2nd Author's Name | Haruki YOKOYAMA |
2nd Author's Affiliation | NTT Photonics Laboratories, NTT corporation |
3rd Author's Name | Naoteru SHIGEKAWA |
3rd Author's Affiliation | Graduate School of Engineering, Osaka City University |
Date | 2012-11-29 |
Paper # | ED2012-70,CPM2012-127,LQE2012-98 |
Volume (vol) | vol.112 |
Number (no) | 327 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |