| Presentation | 2012-11-29 Application of III-V nitride films to photovoltaic devices Masatomo Sumiya, Liwen Sang, Mickael Lozach, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mechanically stacked with transparent glue on conventional InGaP solar cell, and photovoltaic power is independently obtained through 4 terminals, which would increase conversion efficiency. Current matching, which is crucial in tandem-type solar cell, is not taken into account in this structure. Defects in InGaN film with thickness of 0.3μm for applying to solar cell were characterized by using deep level optical spectroscopy. Ga vacancy and/or its complex with oxygen impurities must be enhanced by alloying InN to GaN. Conversion efficiency of p-i-n III-V nitride solar cell was improved by inserting AlN layer with ～2nm of thickness grown at 800℃ at the interface between p- and i-layers. Dislocation and point defects must be terminated by the AlN thin layer, which could improve the structure at p-i interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | III-V nitride films / Solar cell / Deep level optical spectroscopy / point defects |
| Paper # | ED2012-67,CPM2012-124,LQE2012-95 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of III-V nitride films to photovoltaic devices |
| Sub Title (in English) | |
| Keyword(1) | III-V nitride films |
| Keyword(2) | Solar cell |
| Keyword(3) | Deep level optical spectroscopy |
| Keyword(4) | point defects |
| 1st Author's Name | Masatomo Sumiya |
| 1st Author's Affiliation | Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency() |
| 2nd Author's Name | Liwen Sang |
| 2nd Author's Affiliation | ICYS-MANA, National Institute for Materials Science:JST-PREST, Japan Science and Technology Agency |
| 3rd Author's Name | Mickael Lozach |
| 3rd Author's Affiliation | Doctoral Program in Materials Science and Engineering, University of Tsukuba |
| Date | 2012-11-29 |
| Paper # | ED2012-67,CPM2012-124,LQE2012-95 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |