| Presentation | 2012-11-29 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki KOBAYASHI, Kazuhide KUMAKURA, Tetsuya AKASAKA, Hideki YAMAMOTO, Toshiki MAKIMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride Semiconductors / Hexagonal Boron Nitride / Mechanical Transfer |
| Paper # | ED2012-66,CPM2012-123,LQE2012-94 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices |
| Sub Title (in English) | |
| Keyword(1) | Nitride Semiconductors |
| Keyword(2) | Hexagonal Boron Nitride |
| Keyword(3) | Mechanical Transfer |
| 1st Author's Name | Yasuyuki KOBAYASHI |
| 1st Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation() |
| 2nd Author's Name | Kazuhide KUMAKURA |
| 2nd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 3rd Author's Name | Tetsuya AKASAKA |
| 3rd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 4th Author's Name | Hideki YAMAMOTO |
| 4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 5th Author's Name | Toshiki MAKIMOTO |
| 5th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| Date | 2012-11-29 |
| Paper # | ED2012-66,CPM2012-123,LQE2012-94 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 1 |
| Date of Issue | |