| Presentation | 2012-11-29 Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding Jianbo LIANG, Naoteru SHIGEGAWA, Eiji HIGURASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electrical properties of Si/Si, Si/GaN and Si/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. Current-voltage (I-V) characteristics of n-Si/n-Si and n-Si/n-GaN junctions indicated ohmic features at room temperature. The I-V characteristics of respective n-Si/n-Si dice were close to one another. No mechanical deficits were observed in n-Si/n-GaN junctions after measurements in varied temperatures. The p-Si/n-GaAs junctions revealed good rectifying properties. Their flat-band voltage was around 1.6V, which is close to the diffusion potential calculated for p-Si/n-GaAs heterojunctions with no electric charges placed at the interface. These results indicate that the SAB is potentially applicable for fabricating novel devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Surface-activated bonding / current-voltage characteristics / trap-assisted tunneling / heterojunctions / GaN / GaAs / hybrid tandem solar cell |
| Paper # | ED2012-65,CPM2012-122,LQE2012-93 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding |
| Sub Title (in English) | |
| Keyword(1) | Surface-activated bonding |
| Keyword(2) | current-voltage characteristics |
| Keyword(3) | trap-assisted tunneling |
| Keyword(4) | heterojunctions |
| Keyword(5) | GaN |
| Keyword(6) | GaAs |
| Keyword(7) | hybrid tandem solar cell |
| 1st Author's Name | Jianbo LIANG |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka City University() |
| 2nd Author's Name | Naoteru SHIGEGAWA |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka City University |
| 3rd Author's Name | Eiji HIGURASHI |
| 3rd Author's Affiliation | RCAST, Univ. of Tokyo |
| Date | 2012-11-29 |
| Paper # | ED2012-65,CPM2012-122,LQE2012-93 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |