Presentation 2012-10-17
Electrical property of CTAB/Si hetero-structures
Yoko DEGUCHI, Mari TAGUCHI, Atsumi OZAWA, Hajime IMAI,
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Abstract(in English) We have used a surfactant material of Cetyl Trimethyl Ammonium Bromide: CTAB as an organic material. We have already evaluated the electrical and optical properties of this material, such as the resistivity, its temperature dependence, and the spectral dependence of the photoconductivity. Furthermore, we made the homo-junction sample of CTAB materials. The I-V characteristics were reported to be very similar to the inorganic p-n homo-junction diode characteristics. We fabricated two different the hetero-structure diodes using p-C_<16>TAB/n-Si and n-C_<16>TAB/p-Si. We measured I-V characteristics to evaluate the diode performance of them. Moreover, from the I-V characteristics, we estimated the electron affinity of C_<16>TAB. Further, we considered the Fermi-level of C_<16>TAB using the value of the electron affinity.
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Keyword(in English) Organic material / The hetero-structure diodes
Paper # OME2012-46
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Committee OME
Conference Date 2012/10/10(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Electrical property of CTAB/Si hetero-structures
Sub Title (in English)
Keyword(1) Organic material
Keyword(2) The hetero-structure diodes
1st Author's Name Yoko DEGUCHI
1st Author's Affiliation Faculty of Science, Japan Women's University()
2nd Author's Name Mari TAGUCHI
2nd Author's Affiliation Faculty of Science, Japan Women's University
3rd Author's Name Atsumi OZAWA
3rd Author's Affiliation Faculty of Science, Japan Women's University
4th Author's Name Hajime IMAI
4th Author's Affiliation Faculty of Science, Japan Women's University
Date 2012-10-17
Paper # OME2012-46
Volume (vol) vol.112
Number (no) 244
Page pp.pp.-
#Pages 4
Date of Issue