| Presentation | 2012-10-17 Influence of grain size on evaluation of the electric field in the organic FET Kohei Matsubara, Takaaki Manaka, Dai Taguchi, Mitsumasa Iwamoto, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electric field distribution which governs carrier behaviors in the organic devices can be evaluated by using the electric field induced second harmonic generation (EFISHG) measurement. The SHG signal strongly depends on the materials used in the devices and the fabrication process of devices. Here, we study the influence of grain size on the evaluation of electric fields in the organic FETs. EFISHG signals generated from fullerene FETs indicated that the film is optically isotropic, whereas that from pentacene FET has small anisotropy. The main reason of this difference in the SHG is ascribed to the grain size, where the grain size of the vacuum deposited fullerene and pentacene film are approximately 20nm and 500nm, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Optical second harmonic generation / Organic FET / Electric field distribution |
| Paper # | OME2012-45 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2012/10/10(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of grain size on evaluation of the electric field in the organic FET |
| Sub Title (in English) | |
| Keyword(1) | Optical second harmonic generation |
| Keyword(2) | Organic FET |
| Keyword(3) | Electric field distribution |
| 1st Author's Name | Kohei Matsubara |
| 1st Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Takaaki Manaka |
| 2nd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Dai Taguchi |
| 3rd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Mitsumasa Iwamoto |
| 4th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| Date | 2012-10-17 |
| Paper # | OME2012-45 |
| Volume (vol) | vol.112 |
| Number (no) | 244 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |