Presentation 2012-10-12
Evaluation of Memory Management Schema in Flash SSD
Takuma KOUGE, Toshiaki KITAMURA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The NAND Flash memory is nonvolatile semiconductor memory used for storage element of SSD. SSD needs to handle the data between host and NAND Flash memory and handle restrictions on use. Logical-physical address translation greatly concerns performance and lifetime of SSD. This is performed by various systems. Therefore, we made a software simulator of SSD based on NAND Flash memory. Then, we focus attention on granularity of data which performs logical-physical address translation, and implemented memory management schema of the NAND Flash memory called Replacement BlockFTL, DFTL and BAST. In this paper, we simulated each control schema with some workloads, and evaluated their the performance and lifetime. By changing the capacity of DRAM buffer, SSD performance improved 31%, and Write Amplification decreased 1.8 point. We learned SRAM is significant factor for SSD lifetime in random access workload. In BAST, garbage collection increased about 35,000 times and the performance decrease 9% when the sequential/random threshold value was enlarged.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND Flash Memory / Flash Translation Layer / Storage System
Paper # CPSY2012-43
Date of Issue

Conference Information
Committee CPSY
Conference Date 2012/10/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Computer Systems (CPSY)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of Memory Management Schema in Flash SSD
Sub Title (in English)
Keyword(1) NAND Flash Memory
Keyword(2) Flash Translation Layer
Keyword(3) Storage System
1st Author's Name Takuma KOUGE
1st Author's Affiliation Graduate School of Information Sciences, Hiroshima City University()
2nd Author's Name Toshiaki KITAMURA
2nd Author's Affiliation Graduate School of Information Sciences, Hiroshima City University
Date 2012-10-12
Paper # CPSY2012-43
Volume (vol) vol.112
Number (no) 237
Page pp.pp.-
#Pages 6
Date of Issue