Presentation | 2012-10-26 Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation Tsugutomo KUDOH, Fumihiko SUGAWARA, Koichi OHNUMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have previously proposed a DMOS self-biased channel diode incorporating a self-bias effect in a channel diode with three-terminal operation. The proposed diode exhibits good characteristics with low loss and resistance to thermal runaway. However, since it does not have a body-shorted structure, an improved breakdown voltage is deemed necessary. In the present study, we investigated the effects of additional impurity profiling by self-aligned deep implantation of boron ions with a peak density of 7×10^<19>/cm^3 in the double-diffusion impurity region on the anode side of the device. In 3D device simulations, this was shown to provide a breakdown voltage of -27.2(V), an improvement of approximately 13(V) from the value of -14.7(V) obtained with the ordinary double-diffusion structure, without adversely affecting the forward characteristics. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | DMOS-type / Self-biased channel diode / deep Boron ion implantation / improvement of breakdown voltage / 3D-simulation |
Paper # | EMCJ2012-79,EST2012-63 |
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Committee | EST |
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Conference Date | 2012/10/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Simulation Technology (EST) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation |
Sub Title (in English) | |
Keyword(1) | DMOS-type |
Keyword(2) | Self-biased channel diode |
Keyword(3) | deep Boron ion implantation |
Keyword(4) | improvement of breakdown voltage |
Keyword(5) | 3D-simulation |
1st Author's Name | Tsugutomo KUDOH |
1st Author's Affiliation | Faculty of Engineering, Kanagawa Institute of Technology() |
2nd Author's Name | Fumihiko SUGAWARA |
2nd Author's Affiliation | Faculty of Engineering, Tohoku Gakuin University |
3rd Author's Name | Koichi OHNUMA |
3rd Author's Affiliation | Faculty of Engineering, Tohoku Gakuin University |
Date | 2012-10-26 |
Paper # | EMCJ2012-79,EST2012-63 |
Volume (vol) | vol.112 |
Number (no) | 257 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |