Presentation 2012-10-26
Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation
Tsugutomo KUDOH, Fumihiko SUGAWARA, Koichi OHNUMA,
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Abstract(in English) We have previously proposed a DMOS self-biased channel diode incorporating a self-bias effect in a channel diode with three-terminal operation. The proposed diode exhibits good characteristics with low loss and resistance to thermal runaway. However, since it does not have a body-shorted structure, an improved breakdown voltage is deemed necessary. In the present study, we investigated the effects of additional impurity profiling by self-aligned deep implantation of boron ions with a peak density of 7×10^<19>/cm^3 in the double-diffusion impurity region on the anode side of the device. In 3D device simulations, this was shown to provide a breakdown voltage of -27.2(V), an improvement of approximately 13(V) from the value of -14.7(V) obtained with the ordinary double-diffusion structure, without adversely affecting the forward characteristics.
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Keyword(in English) DMOS-type / Self-biased channel diode / deep Boron ion implantation / improvement of breakdown voltage / 3D-simulation
Paper # EMCJ2012-79,EST2012-63
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Committee EST
Conference Date 2012/10/18(1days)
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Registration To Electronic Simulation Technology (EST)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation
Sub Title (in English)
Keyword(1) DMOS-type
Keyword(2) Self-biased channel diode
Keyword(3) deep Boron ion implantation
Keyword(4) improvement of breakdown voltage
Keyword(5) 3D-simulation
1st Author's Name Tsugutomo KUDOH
1st Author's Affiliation Faculty of Engineering, Kanagawa Institute of Technology()
2nd Author's Name Fumihiko SUGAWARA
2nd Author's Affiliation Faculty of Engineering, Tohoku Gakuin University
3rd Author's Name Koichi OHNUMA
3rd Author's Affiliation Faculty of Engineering, Tohoku Gakuin University
Date 2012-10-26
Paper # EMCJ2012-79,EST2012-63
Volume (vol) vol.112
Number (no) 257
Page pp.pp.-
#Pages 5
Date of Issue