| Presentation | 2012-10-26 Investigation of Relation between Disturbance Level and Degradation of Semiconductor Devices by Using TTL Tsubasa UEDA, Hiromu OKUMURA, Nobuo KUWABARA, Yoshiharu AKIYAMA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Various information is included in the electromagnetic waves leaked from an electronic device. If information required for maintenance of an electronic device is acquirable from the electromagnetic waves, we can estimate the degradation of the devices by non-contact. Then, the relation between the degradation and the emitted electromagnetic field was investigating by using a TTL. TTL was selected as the devices for experiment and heat deterioration was carried out for the investigation. The investigation suggests following results; 1) Degradation of TTL advances by Arrhenius equation and the process is independent from the method of heating, 2) The emission level from TTL decreases according to degradation of TTL, 3) More investigation is needed to identify the degrading TTL from leaked electromagnetic field although the magnetic field distribution changes by existing of the degrading TTLs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Leaked electromagnetic field / Degradation of electrical devices / TTL / Heat degradation |
| Paper # | EMCJ2012-76,EST2012-60 |
| Date of Issue |
| Conference Information | |
| Committee | EST |
|---|---|
| Conference Date | 2012/10/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Simulation Technology (EST) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of Relation between Disturbance Level and Degradation of Semiconductor Devices by Using TTL |
| Sub Title (in English) | |
| Keyword(1) | Leaked electromagnetic field |
| Keyword(2) | Degradation of electrical devices |
| Keyword(3) | TTL |
| Keyword(4) | Heat degradation |
| 1st Author's Name | Tsubasa UEDA |
| 1st Author's Affiliation | Kyushu Institute of Technology() |
| 2nd Author's Name | Hiromu OKUMURA |
| 2nd Author's Affiliation | Kyushu Institute of Technology |
| 3rd Author's Name | Nobuo KUWABARA |
| 3rd Author's Affiliation | Kyushu Institute of Technology |
| 4th Author's Name | Yoshiharu AKIYAMA |
| 4th Author's Affiliation | NTT Energy and Environment Systems Laboratories |
| Date | 2012-10-26 |
| Paper # | EMCJ2012-76,EST2012-60 |
| Volume (vol) | vol.112 |
| Number (no) | 257 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |