Presentation | 2012-08-23 Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes Sundararajan Balasekaran, Hiroshi Inada, Yasuhiro Iguchi, Michio Murata, Tsukuru Katsuyama, Kei Fujii, Takashi Ishizuka, Katsushi Akita, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | InGaAs/GaAsSb type-II quantum well (QW) structures lattice-matched to InP substrates exhibit unique optical properties because of their staggered band configurations. In order to verify the merits of the type-II QW structures, optical recombination processes in type-II QW LEDs and bulk InGaAs LEDs were analyzed by current optical output characteristics (Z-parameter) with different temperatures. The result indicates that Auger recombination in the type-II QW LEDs is suppressed in comparison with that of the bulk InGaAs LEDs, especially at high temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaAs/GaAsSb / type-II QW LED / Auger recombination / Z parameter |
Paper # | R2012-32,EMD2012-38,CPM2012-63,OPE2012-70,LQE2012-36 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2012/8/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes |
Sub Title (in English) | |
Keyword(1) | InGaAs/GaAsSb |
Keyword(2) | type-II QW LED |
Keyword(3) | Auger recombination |
Keyword(4) | Z parameter |
1st Author's Name | Sundararajan Balasekaran |
1st Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works() |
2nd Author's Name | Hiroshi Inada |
2nd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
3rd Author's Name | Yasuhiro Iguchi |
3rd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
4th Author's Name | Michio Murata |
4th Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
5th Author's Name | Tsukuru Katsuyama |
5th Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
6th Author's Name | Kei Fujii |
6th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
7th Author's Name | Takashi Ishizuka |
7th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
8th Author's Name | Katsushi Akita |
8th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
Date | 2012-08-23 |
Paper # | R2012-32,EMD2012-38,CPM2012-63,OPE2012-70,LQE2012-36 |
Volume (vol) | vol.112 |
Number (no) | 184 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |