| Presentation | 2012-08-23 Current Injecting Operation and Thermal Analysis of GaInAsP/InP Membrane DFB Laser Kyohei DOI, Takahiko SHINDO, Mitsuaki FUTAMI, Tomohiro Amemiya, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have proposed a semiconductor membrane distributed feedback (DFB) laser as a light source for on-chip optical interconnection. The membrane laser consisting of low refractive-index cladding layers is expected to operate with ultra-low threshold current due to its strong optical confinement effect. Up to now, we fabricated the device with the core layer thickness of 450 nm and the cavity length of 300 μm Although a threshold current of 11 mA was observed under RT-pulsed condition, a RT-continuous-wave (CW) operation wasn't achieved. Then, we theoretically investigated thermal characteristics of the membrane laser by using simulated temperature distribution. As a result, thermal resistance of the fabricated device was estimated to be 1100 K/W and it was confirmed that the RT-CW operation was very difficult. Next, the thermal characteristics of the membrane laser with the core layer thickness of 150 nm were calculated. Even though the thermal resistance was estimated to be 7000 K/W at a driving current of 1 mA, it was revealed that a RT-CW operation with a light output power required for 10 Gbit/s on-chip optical interconnection can be obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor membrane laser / lateral current injection / strong optical confinement / thermal analysis |
| Paper # | R2012-29,EMD2012-35,CPM2012-60,OPE2012-67,LQE2012-33 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2012/8/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current Injecting Operation and Thermal Analysis of GaInAsP/InP Membrane DFB Laser |
| Sub Title (in English) | |
| Keyword(1) | semiconductor membrane laser |
| Keyword(2) | lateral current injection |
| Keyword(3) | strong optical confinement |
| Keyword(4) | thermal analysis |
| 1st Author's Name | Kyohei DOI |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology() |
| 2nd Author's Name | Takahiko SHINDO |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 3rd Author's Name | Mitsuaki FUTAMI |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 4th Author's Name | Tomohiro Amemiya |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center Tokyo Institute of Technology |
| 5th Author's Name | Nobuhiko NISHIYAMA |
| 5th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 6th Author's Name | Shigehisa ARAI |
| 6th Author's Affiliation | Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology:Quantum Nanoelectronics Research Center Tokyo Institute of Technology |
| Date | 2012-08-23 |
| Paper # | R2012-29,EMD2012-35,CPM2012-60,OPE2012-67,LQE2012-33 |
| Volume (vol) | vol.112 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |