| Presentation | 2012-08-24 Monolithic Integration of a Silica AWG and Ge PDs on Si Photonic Platform for One-Chip WDM Receiver Hidetaka NISHI, Tai TSUCHIZAWA, Rai KOU, Tatsuro HIRAKI, Hiroshi FUKUDA, Yasuhiko ISHIKAWA, Kazumi WADA, Koji YAMADA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Using low-temperature ECR PECVD technology, a silica-based AWG was monolithically integrated with germanium photodiodes on a Si photonic platform. We confirmed that the integrated AWG successfully demultiplex all of 16-wavelength channels and all of integrated GePDs received 1.25 Gbps PRBS signals with clear eye opening. In addition, we have mounted multi-channel transimpedance amplifiers and limiting amplifiers on the integrated photonic device using flip-chip bonding technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si photonics / monolithic integration / ECR-CVD / WDM / AWG / Ge PD |
| Paper # | R2012-43,EMD2012-49,CPM2012-74,OPE2012-81,LQE2012-47 |
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| Conference Information | |
| Committee | EMD |
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| Conference Date | 2012/8/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electromechanical Devices (EMD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Monolithic Integration of a Silica AWG and Ge PDs on Si Photonic Platform for One-Chip WDM Receiver |
| Sub Title (in English) | |
| Keyword(1) | Si photonics |
| Keyword(2) | monolithic integration |
| Keyword(3) | ECR-CVD |
| Keyword(4) | WDM |
| Keyword(5) | AWG |
| Keyword(6) | Ge PD |
| 1st Author's Name | Hidetaka NISHI |
| 1st Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp.() |
| 2nd Author's Name | Tai TSUCHIZAWA |
| 2nd Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp. |
| 3rd Author's Name | Rai KOU |
| 3rd Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp. |
| 4th Author's Name | Tatsuro HIRAKI |
| 4th Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp. |
| 5th Author's Name | Hiroshi FUKUDA |
| 5th Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp. |
| 6th Author's Name | Yasuhiko ISHIKAWA |
| 6th Author's Affiliation | Department of Material Engineering, University of Tokyo |
| 7th Author's Name | Kazumi WADA |
| 7th Author's Affiliation | Department of Material Engineering, University of Tokyo |
| 8th Author's Name | Koji YAMADA |
| 8th Author's Affiliation | NTT Microsystem Integration Labs., NTT Corp.:Nanophotonics Center, NTT Corp. |
| Date | 2012-08-24 |
| Paper # | R2012-43,EMD2012-49,CPM2012-74,OPE2012-81,LQE2012-47 |
| Volume (vol) | vol.112 |
| Number (no) | 181 |
| Page | pp.pp.- |
| #Pages | 4 |
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