Presentation | 2012-08-03 A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process Masafumi ONOUCHI, Kazuo OTSUGA, Yasuto IGARASHI, Toyohito IKEYA, Sadayuki MORITA, Koichiro ISHIBASHI, Kazumasa YANAGISAWA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A digital low-dropout (LDO) regulator comprising only thin-oxide MOS transistors was developed. The input voltage to the LDO is set to be higher than the nominal overdrive voltage of thin-oxide MOS transistors by applying the proposed overdrive-voltage relaxation scheme. In the LDO, fast transient response can be achieved by applying an output capacitor-less design, which is based on power-MOS features as follows: 1-GHz switching and the small number of levels whereas a wide range of load current (400μA-250mA) can be covered by applying the proposed power-MOS configuration. The LDO occupies only 0.057mm^2 area using 40-nm CMOS technology, and the measured the transient response time is only 0.07μs. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Low-dropout regulator / digital control / fast-transient response / DVFS |
Paper # | SDM2012-82,ICD2012-50 |
Date of Issue |
Conference Information | |
Committee | ICD |
---|---|
Conference Date | 2012/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process |
Sub Title (in English) | |
Keyword(1) | Low-dropout regulator |
Keyword(2) | digital control |
Keyword(3) | fast-transient response |
Keyword(4) | DVFS |
1st Author's Name | Masafumi ONOUCHI |
1st Author's Affiliation | Renesas Electronics Corp.() |
2nd Author's Name | Kazuo OTSUGA |
2nd Author's Affiliation | Renesas Electronics Corp. |
3rd Author's Name | Yasuto IGARASHI |
3rd Author's Affiliation | Renesas Electronics Corp. |
4th Author's Name | Toyohito IKEYA |
4th Author's Affiliation | Renesas Electronics Corp. |
5th Author's Name | Sadayuki MORITA |
5th Author's Affiliation | Renesas Electronics Corp. |
6th Author's Name | Koichiro ISHIBASHI |
6th Author's Affiliation | The University of Electro-Communications |
7th Author's Name | Kazumasa YANAGISAWA |
7th Author's Affiliation | Renesas Electronics Corp. |
Date | 2012-08-03 |
Paper # | SDM2012-82,ICD2012-50 |
Volume (vol) | vol.112 |
Number (no) | 170 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |