Presentation | 2012-08-03 A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi NAGAI, Noboru NEGORO, Takeshi FUKUDA, Yasufumi KAWAI, Tetsuzo UEDA, Tsuyoshi TANAKA, Nobuyuki OTSUKA, Daisuke UEDA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal after the wireless power transmission of the RF converted input signal, which can provide isolated gate signal and power all together. The one-chip GaN isolated gate driver IC on a sapphire substrate with a novel butterfly-shaped electro-magnetic resonant coupler was fabricated. The direct driving of the GaN-GIT power switching device by the fabricated isolated gate driver without a bulky isolated power supply was successfully demonstrated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Gate driver / Power device / Wireless Power Transmission / Electro-magnetic resonant coupling / Sapphire substrate / GaN-HFET |
Paper # | SDM2012-79,ICD2012-47 |
Date of Issue |
Conference Information | |
Committee | ICD |
---|---|
Conference Date | 2012/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology |
Sub Title (in English) | |
Keyword(1) | Gate driver |
Keyword(2) | Power device |
Keyword(3) | Wireless Power Transmission |
Keyword(4) | Electro-magnetic resonant coupling |
Keyword(5) | Sapphire substrate |
Keyword(6) | GaN-HFET |
1st Author's Name | Shuichi NAGAI |
1st Author's Affiliation | R&D Advanced Technology Research Laboratories, Panasonic Corporation() |
2nd Author's Name | Noboru NEGORO |
2nd Author's Affiliation | Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation |
3rd Author's Name | Takeshi FUKUDA |
3rd Author's Affiliation | R&D Advanced Technology Research Laboratories, Panasonic Corporation |
4th Author's Name | Yasufumi KAWAI |
4th Author's Affiliation | R&D Advanced Technology Research Laboratories, Panasonic Corporation |
5th Author's Name | Tetsuzo UEDA |
5th Author's Affiliation | Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation |
6th Author's Name | Tsuyoshi TANAKA |
6th Author's Affiliation | Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation |
7th Author's Name | Nobuyuki OTSUKA |
7th Author's Affiliation | R&D Advanced Technology Research Laboratories, Panasonic Corporation |
8th Author's Name | Daisuke UEDA |
8th Author's Affiliation | R&D Advanced Technology Research Laboratories, Panasonic Corporation |
Date | 2012-08-03 |
Paper # | SDM2012-79,ICD2012-47 |
Volume (vol) | vol.112 |
Number (no) | 170 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |