Presentation 2012-08-02
Static noise margin and energy performance analyses of a nonvolatile SRAM cell using pseudo-spin-MOSFET
Yusuke SHUTO, Shuu'ichirou YAMAMOTO, Satoshi SUGAHARA,
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Abstract(in English) We proposed a new nonvolatile SRAM (NV-SRAM) cell and a nonvolatile FF (NV-FF) using pseudo-spin-MOSFETs (that can be configured with an ordinary MOSFET and a ferromagnetic tunnel junction), which are adaptable to the present CMOS technology, and we also proposed nonvolatile power-gating (NVPG) employing the NV-SRAM and NV-FF circuits as a standby-power reduction architecture. In this study, the static noise margin and energy performance of the NV-SRAM cell using pseudo-spin-MOSFETs were analyzed in detail, and microarchitectures for improving these properties were also developed. The NV-SRAM cell with the proposed microarchitectures is promising for highly energy-efficient NVPG systems.
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Keyword(in English) CMOS/spintronics hybrid technology / Power-gating / Nonvolatile SRAM / Nonvolatile flip-flop / Pseudo-spin-MOSFET / Spin-transistor architecture
Paper # SDM2012-75,ICD2012-43
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Committee ICD
Conference Date 2012/7/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Static noise margin and energy performance analyses of a nonvolatile SRAM cell using pseudo-spin-MOSFET
Sub Title (in English)
Keyword(1) CMOS/spintronics hybrid technology
Keyword(2) Power-gating
Keyword(3) Nonvolatile SRAM
Keyword(4) Nonvolatile flip-flop
Keyword(5) Pseudo-spin-MOSFET
Keyword(6) Spin-transistor architecture
1st Author's Name Yusuke SHUTO
1st Author's Affiliation ISEL, Tokyo Inst. of Tech.:CREST, JST:KAST, KSP()
2nd Author's Name Shuu'ichirou YAMAMOTO
2nd Author's Affiliation IGS, Tokyo Inst. of Tech.:CREST, JST
3rd Author's Name Satoshi SUGAHARA
3rd Author's Affiliation ISEL, Tokyo Inst. of Tech.:CREST, JST
Date 2012-08-02
Paper # SDM2012-75,ICD2012-43
Volume (vol) vol.112
Number (no) 170
Page pp.pp.-
#Pages 6
Date of Issue