Presentation | 2012-08-02 Scalable 3-D Vertical Chain-Cell-Type Phase-Change Memory with 4F^2 Poly-Si Diodes Masaharu KINOSHITA, Yoshitaka SASAGO, Hiroyuki MINEMURA, Yumiko ANZAI, Mitsuharu TAI, Yoshihisa FUJISAKI, Shuichi KUSABA, Tadao MORIMOTO, Takashi TAKAHAMA, Toshiyuki MINE, Akio SHIMA, Yoshiki YONAMOYO, Takashi KOBAYASHI, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity storage was developed. The VCCPCM features formation of memory holes in multi-layered stacked gates by using a single mask and a memory array without a selection transistor. As a result of this configuration, the number of process steps for fabricating the VCCPCM is reduced. The excellent scalability of the VCCPCM's new phase-change material makes it possible to reduce the cell size beyond the scaling limit of flash memory. In addition, a poly-silicon selection diode makes it possible to reduce the cell factor to 4F^2. Consequently, relative cost of the VCCPCM compared to 3-D flash memory is reduced to 0.2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | phase-change memory / chain-cell-type / 3-D / vertical |
Paper # | SDM2012-74,ICD2012-42 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2012/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Scalable 3-D Vertical Chain-Cell-Type Phase-Change Memory with 4F^2 Poly-Si Diodes |
Sub Title (in English) | |
Keyword(1) | phase-change memory |
Keyword(2) | chain-cell-type |
Keyword(3) | 3-D |
Keyword(4) | vertical |
1st Author's Name | Masaharu KINOSHITA |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | Yoshitaka SASAGO |
2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
3rd Author's Name | Hiroyuki MINEMURA |
3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
4th Author's Name | Yumiko ANZAI |
4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
5th Author's Name | Mitsuharu TAI |
5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
6th Author's Name | Yoshihisa FUJISAKI |
6th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
7th Author's Name | Shuichi KUSABA |
7th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
8th Author's Name | Tadao MORIMOTO |
8th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
9th Author's Name | Takashi TAKAHAMA |
9th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
10th Author's Name | Toshiyuki MINE |
10th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
11th Author's Name | Akio SHIMA |
11th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
12th Author's Name | Yoshiki YONAMOYO |
12th Author's Affiliation | Yokohama Research Laboratory, Hitachi, Ltd. |
13th Author's Name | Takashi KOBAYASHI |
13th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
Date | 2012-08-02 |
Paper # | SDM2012-74,ICD2012-42 |
Volume (vol) | vol.112 |
Number (no) | 170 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |