Presentation 2012-08-02
Scalable 3-D Vertical Chain-Cell-Type Phase-Change Memory with 4F^2 Poly-Si Diodes
Masaharu KINOSHITA, Yoshitaka SASAGO, Hiroyuki MINEMURA, Yumiko ANZAI, Mitsuharu TAI, Yoshihisa FUJISAKI, Shuichi KUSABA, Tadao MORIMOTO, Takashi TAKAHAMA, Toshiyuki MINE, Akio SHIMA, Yoshiki YONAMOYO, Takashi KOBAYASHI,
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Abstract(in English) A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity storage was developed. The VCCPCM features formation of memory holes in multi-layered stacked gates by using a single mask and a memory array without a selection transistor. As a result of this configuration, the number of process steps for fabricating the VCCPCM is reduced. The excellent scalability of the VCCPCM's new phase-change material makes it possible to reduce the cell size beyond the scaling limit of flash memory. In addition, a poly-silicon selection diode makes it possible to reduce the cell factor to 4F^2. Consequently, relative cost of the VCCPCM compared to 3-D flash memory is reduced to 0.2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) phase-change memory / chain-cell-type / 3-D / vertical
Paper # SDM2012-74,ICD2012-42
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Committee ICD
Conference Date 2012/7/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Scalable 3-D Vertical Chain-Cell-Type Phase-Change Memory with 4F^2 Poly-Si Diodes
Sub Title (in English)
Keyword(1) phase-change memory
Keyword(2) chain-cell-type
Keyword(3) 3-D
Keyword(4) vertical
1st Author's Name Masaharu KINOSHITA
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Yoshitaka SASAGO
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Hiroyuki MINEMURA
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name Yumiko ANZAI
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
5th Author's Name Mitsuharu TAI
5th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
6th Author's Name Yoshihisa FUJISAKI
6th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
7th Author's Name Shuichi KUSABA
7th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
8th Author's Name Tadao MORIMOTO
8th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
9th Author's Name Takashi TAKAHAMA
9th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
10th Author's Name Toshiyuki MINE
10th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
11th Author's Name Akio SHIMA
11th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
12th Author's Name Yoshiki YONAMOYO
12th Author's Affiliation Yokohama Research Laboratory, Hitachi, Ltd.
13th Author's Name Takashi KOBAYASHI
13th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2012-08-02
Paper # SDM2012-74,ICD2012-42
Volume (vol) vol.112
Number (no) 170
Page pp.pp.-
#Pages 5
Date of Issue