| Presentation | 2012-08-02 Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki SUGII, Toshiaki IWAMATSU, Yoshiki YAMAMOTO, Hideki MAKIYAMA, Takaaki TSUNOMURA, Hirofumi SHINOHARA, Hideki AONO, Hidekazu ODA, Shiro KAMOHARA, Yasuo YAMAGUCHI, Tomoko MIZUTANI, Toshiro HIRAMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficiency can extend the application field of electron devices: ubiquitous sensor network, etc. The main issues for ULV operation for the modern scaled CMOS are reducing variability and adaptive control of circuit performances enabling the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. Features of the SOTB, transistor technology dedicated for ULV operation are presented and importance of device-circuit interaction to extend the application field is discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / FDSOI / low power / variability / back-bias control |
| Paper # | SDM2012-68,ICD2012-36 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2012/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | FDSOI |
| Keyword(3) | low power |
| Keyword(4) | variability |
| Keyword(5) | back-bias control |
| 1st Author's Name | Nobuyuki SUGII |
| 1st Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation() |
| 2nd Author's Name | Toshiaki IWAMATSU |
| 2nd Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 3rd Author's Name | Yoshiki YAMAMOTO |
| 3rd Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 4th Author's Name | Hideki MAKIYAMA |
| 4th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 5th Author's Name | Takaaki TSUNOMURA |
| 5th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 6th Author's Name | Hirofumi SHINOHARA |
| 6th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 7th Author's Name | Hideki AONO |
| 7th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 8th Author's Name | Hidekazu ODA |
| 8th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 9th Author's Name | Shiro KAMOHARA |
| 9th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 10th Author's Name | Yasuo YAMAGUCHI |
| 10th Author's Affiliation | Low-power Electronics Association & Project (LEAP):Renesas Electronics Corporation |
| 11th Author's Name | Tomoko MIZUTANI |
| 11th Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| 12th Author's Name | Toshiro HIRAMOTO |
| 12th Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| Date | 2012-08-02 |
| Paper # | SDM2012-68,ICD2012-36 |
| Volume (vol) | vol.112 |
| Number (no) | 170 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |