Presentation 2012-08-02
A 40-nm 256-Kb Sub-10 pJ/Access 8T SRAM with Read Bitline Amplitude Limiting (RBAL) Scheme
Shusuke YOSHIMOTO, Masaharu TERADA, Youhei UMEKI, Shunsuke OKUMURA, Atsushi KAWASUMI, Toshikazu SUZUKI, Shinichi MORIWAKI, Shinji MIYANO, Hiroshi KAWAGUCHI, Masahiko YOSHIMOTO,
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Abstract(in English) This paper presents a novel read-bitline amplitude limiting (RBAL) scheme which suppresses dynamic energy dissipation caused by random variation. In addition, a discharge acceleration (DA) circuit is proposed to decrease delay overhead of RBAL. The proposed scheme improves the active energy dissipation in a read cycle by 22% at the center-center (CC) corner and 25℃. The maximum delay overhead is 32% at the fast-slow (FS) corner and -40℃. The circuits have been implemented using the 40-nm bulk CMOS process. The implemented 256-Kb 8T SRAM works fine with energy dissipation of sub-10 pJ / access from 0.5-0.7V.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 8T SRAM / low voltage / low energy / read bitline limiter / discharge accelerator
Paper # SDM2012-64,ICD2012-32
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Conference Date 2012/7/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 40-nm 256-Kb Sub-10 pJ/Access 8T SRAM with Read Bitline Amplitude Limiting (RBAL) Scheme
Sub Title (in English)
Keyword(1) 8T SRAM
Keyword(2) low voltage
Keyword(3) low energy
Keyword(4) read bitline limiter
Keyword(5) discharge accelerator
1st Author's Name Shusuke YOSHIMOTO
1st Author's Affiliation Graduate School of System Informatics, Kobe University()
2nd Author's Name Masaharu TERADA
2nd Author's Affiliation Graduate School of System Informatics, Kobe University
3rd Author's Name Youhei UMEKI
3rd Author's Affiliation Graduate School of System Informatics, Kobe University
4th Author's Name Shunsuke OKUMURA
4th Author's Affiliation Graduate School of System Informatics, Kobe University
5th Author's Name Atsushi KAWASUMI
5th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
6th Author's Name Toshikazu SUZUKI
6th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
7th Author's Name Shinichi MORIWAKI
7th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
8th Author's Name Shinji MIYANO
8th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
9th Author's Name Hiroshi KAWAGUCHI
9th Author's Affiliation Graduate School of System Informatics, Kobe University
10th Author's Name Masahiko YOSHIMOTO
10th Author's Affiliation Graduate School of System Informatics, Kobe University
Date 2012-08-02
Paper # SDM2012-64,ICD2012-32
Volume (vol) vol.112
Number (no) 170
Page pp.pp.-
#Pages 6
Date of Issue