Presentation 2012-08-02
A Variation-Aware Low-Voltage Set-Associative Cache with Mixed-Associativity
Jinwook Jung, Yohei Nakata, Shunsuke Okumura, Hiroshi Kawaguchi, Masahiko Yoshimoto,
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Abstract(in English) In this paper, we propose the mixed associativity scheme using 7T/14T SRAM, which can reduce the minimum operating voltage of the entire cache efficiently. The proposed mixed associativity scheme allows associativities in each index to be various. It exploits the characteristics of manufacturing-induced defects in memory structures and the recovery feature of 7T/14T SRAM. The proposed scheme has no additional cycle penalty. According to our measurement results, the proposed scheme can reduce the minimum operating voltage by 80mV. Area estimation results show that the area overhead of the proposed cache scheme is 5.22% in 64-KB cache 8-way set-associative cache.
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Keyword(in English) Cache / SRAM / Low-voltage operation / Mixed-associativity
Paper # SDM2012-63,ICD2012-31
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Committee ICD
Conference Date 2012/7/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Variation-Aware Low-Voltage Set-Associative Cache with Mixed-Associativity
Sub Title (in English)
Keyword(1) Cache
Keyword(2) SRAM
Keyword(3) Low-voltage operation
Keyword(4) Mixed-associativity
1st Author's Name Jinwook Jung
1st Author's Affiliation Graduate School of System Informatics, Kobe University()
2nd Author's Name Yohei Nakata
2nd Author's Affiliation Graduate School of System Informatics, Kobe University
3rd Author's Name Shunsuke Okumura
3rd Author's Affiliation Graduate School of System Informatics, Kobe University
4th Author's Name Hiroshi Kawaguchi
4th Author's Affiliation Graduate School of System Informatics, Kobe University
5th Author's Name Masahiko Yoshimoto
5th Author's Affiliation Graduate School of System Informatics, Kobe University:Japan Science and Technology agency CREST
Date 2012-08-02
Paper # SDM2012-63,ICD2012-31
Volume (vol) vol.112
Number (no) 170
Page pp.pp.-
#Pages 6
Date of Issue