| Presentation | 2012-08-23 Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes Sundararajan Balasekaran, Hiroshi Inada, Yasuhiro Iguchi, Michio Murata, Tsukuru Katsuyama, Kei Fujii, Takashi Ishizuka, Katsushi Akita, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaAs/GaAsSb type-II quantum well (QW) structures lattice-matched to InP substrates exhibit unique optical properties because of their staggered band configurations. In order to verify the merits of the type-II QW structures, optical recombination processes in type-II QW LEDs and bulk InGaAs LEDs were analyzed by current optical output characteristics (Z-parameter) with different temperatures. The result indicates that Auger recombination in the type-II QW LEDs is suppressed in comparison with that of the bulk InGaAs LEDs, especially at high temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs/GaAsSb / type-II QW LED / Auger recombination / Z parameter |
| Paper # | R2012-32,EMD2012-38,CPM2012-63,OPE2012-70,LQE2012-36 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2012/8/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes |
| Sub Title (in English) | |
| Keyword(1) | InGaAs/GaAsSb |
| Keyword(2) | type-II QW LED |
| Keyword(3) | Auger recombination |
| Keyword(4) | Z parameter |
| 1st Author's Name | Sundararajan Balasekaran |
| 1st Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works() |
| 2nd Author's Name | Hiroshi Inada |
| 2nd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
| 3rd Author's Name | Yasuhiro Iguchi |
| 3rd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
| 4th Author's Name | Michio Murata |
| 4th Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
| 5th Author's Name | Tsukuru Katsuyama |
| 5th Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works |
| 6th Author's Name | Kei Fujii |
| 6th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
| 7th Author's Name | Takashi Ishizuka |
| 7th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
| 8th Author's Name | Katsushi Akita |
| 8th Author's Affiliation | Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd |
| Date | 2012-08-23 |
| Paper # | R2012-32,EMD2012-38,CPM2012-63,OPE2012-70,LQE2012-36 |
| Volume (vol) | vol.112 |
| Number (no) | 182 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |