| Presentation | 2012-08-09 Low temperature deposition of SiN_x thin films by radical-assisted reaction Mayumi B. TAKEYAMA, Masaru SATO, Yoshihiro NAKATA, Yasushi KOBAYASHI, Tomoji NAKAMURA, Atsushi NOYA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or functional value of LSIs without depending upon the scaling down of circuit size. Through-Si-Vias (TSVs) is an essential wiring technology to stack chips or wafers to form 3-D LSIs. In the 'via last process', it is exactly ideal, the TSV wiring is formed after performing all LSI processes. In this process, deposition of a SiN_x film and a diffusion barrier should be executed at low temperatures below 200℃ to avoid the deterioration of circuits already formed; however, this is one of the difficult issues, because a temperature of 300～350℃ is required to form SiN_x by the conventional processes reported so far. In this study, we propose a new deposition method, in which a sputter-deposited thin Si film is nitrided by assisting radical species. This method is already confirmed to be useful to form thin diffusion barrier of high performance at low temperatures. We can demonstrate the formation of thin SiN_x films below 200℃. The intentional incorporation of carbon and oxygen atoms into the film is also available in this method. Subsequent deposition of SiNX and barrier layers at low temperatures is possible by the method, which provides a way to realize 'via last process' in TSV technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3-dimensional stacked LSI / Through Si via / SiN_x film / low temperature process / radical reaction |
| Paper # | CPM2012-45 |
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| Committee | CPM |
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| Conference Date | 2012/8/1(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature deposition of SiN_x thin films by radical-assisted reaction |
| Sub Title (in English) | |
| Keyword(1) | 3-dimensional stacked LSI |
| Keyword(2) | Through Si via |
| Keyword(3) | SiN_x film |
| Keyword(4) | low temperature process |
| Keyword(5) | radical reaction |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Faculty of Engineering, Kitami institute of technology() |
| 2nd Author's Name | Masaru SATO |
| 2nd Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| 3rd Author's Name | Yoshihiro NAKATA |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Yasushi KOBAYASHI |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Tomoji NAKAMURA |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Atsushi NOYA |
| 6th Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| Date | 2012-08-09 |
| Paper # | CPM2012-45 |
| Volume (vol) | vol.112 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |