Presentation 2012-08-08
Influence of Si thermal annealing on GaP structure grown on Si substrates using metalorganic vapor phase epitaxy
Tatsuya TAKAGI, Ryo MIYAHARA, Yohsuke HORIE, Yasushi TAKANO,
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Abstract(in English) GaP layers were grown on Si substrates using metalorganic vapor phase epitaxy. In order to suppress APD generation, Si(100) substrates 2° or 4°-misoriented toward (011) were used. The substrates were heated in a H_2 flow before GaP nucleation. Growth was initiated by supplying Triethylgallium and PH_3. The structures were characterized using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Single domain GaP layers were readily obtained on 4°-misoriented substrates. At initial growth stage, however, many APDs appeared. The APD structure changed with heating conditions for Si substrates such as temperature and H_2 pressure.
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Keyword(in English) MOVPE / GaP / Si substrate / antiphase domain / atomic force microscopy / transmission electron microscopy
Paper # CPM2012-36
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Committee CPM
Conference Date 2012/8/1(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of Si thermal annealing on GaP structure grown on Si substrates using metalorganic vapor phase epitaxy
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) GaP
Keyword(3) Si substrate
Keyword(4) antiphase domain
Keyword(5) atomic force microscopy
Keyword(6) transmission electron microscopy
1st Author's Name Tatsuya TAKAGI
1st Author's Affiliation Faculty of Engineering, Shizuoka University()
2nd Author's Name Ryo MIYAHARA
2nd Author's Affiliation Faculty of Engineering, Shizuoka University
3rd Author's Name Yohsuke HORIE
3rd Author's Affiliation Faculty of Engineering, Shizuoka University
4th Author's Name Yasushi TAKANO
4th Author's Affiliation Faculty of Engineering, Shizuoka University
Date 2012-08-08
Paper # CPM2012-36
Volume (vol) vol.112
Number (no) 175
Page pp.pp.-
#Pages 4
Date of Issue