| Presentation | 2012-08-08 Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics Yutaka ANEZAKI, Kai SATO, Takahiro KATO, Ariyuki KATO, Maki SUEMITSU, Hideki NAKAZAWA, Yuzuru NARITA, Kanji YASUI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ge nanodots were formed on Si(001) -2° off substrates after the formation of Si c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. Surface structure of the Ge nanodots was measured by scanning tunneling microscopy. SiC capping layer was deposited on the Ge dots formed by various growth conditions and SiC/Ge dots/SiC_x stacked structure was fabricated. From the Ge dot layer capped with the SiC layer, sharp and intense emission peaks were observed. The origin of the emission peaks in the photoluminescence spectra was analyzed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gas-source MBE / Ge nanodot / SiC / scanning tunneling microscopy / photoluminescence |
| Paper # | CPM2012-35 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2012/8/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics |
| Sub Title (in English) | |
| Keyword(1) | gas-source MBE |
| Keyword(2) | Ge nanodot |
| Keyword(3) | SiC |
| Keyword(4) | scanning tunneling microscopy |
| Keyword(5) | photoluminescence |
| 1st Author's Name | Yutaka ANEZAKI |
| 1st Author's Affiliation | Nagaoka University of Technology() |
| 2nd Author's Name | Kai SATO |
| 2nd Author's Affiliation | Nagaoka University of Technology |
| 3rd Author's Name | Takahiro KATO |
| 3rd Author's Affiliation | Nagaoka University of Technology |
| 4th Author's Name | Ariyuki KATO |
| 4th Author's Affiliation | Nagaoka University of Technology |
| 5th Author's Name | Maki SUEMITSU |
| 5th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 6th Author's Name | Hideki NAKAZAWA |
| 6th Author's Affiliation | Graduate School of Science & Technology, Hirosaki University |
| 7th Author's Name | Yuzuru NARITA |
| 7th Author's Affiliation | Yamagata University |
| 8th Author's Name | Kanji YASUI |
| 8th Author's Affiliation | Nagaoka University of Technology |
| Date | 2012-08-08 |
| Paper # | CPM2012-35 |
| Volume (vol) | vol.112 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |