| Presentation | 2012-08-08 Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate Hideki NAKAZAWA, Daiki SUZUKI, Tsugutada NARITA, Yohei YAMAMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have epitaxially grown cubic silicon carbide (3C-SiC) films on an aluminum nitride (AlN) layer on Si(100) substrate by chemical vapor deposition using monomethylsilane (CH_3SiH_3) and pulsed laser deposition using an SiC target, and investigated the crystallinity and surface morphology of the grown films. A single-crystalline AlN(1000) layer was formed on Si(100) substrate by pulsed laser deposition using an AlN target and a N_2 gas. We found that 3C-SiC(111) epitaxial films were grown on the AlN buffer layer. The growth rates of the SiC films on Si/AlN were higher than those of the SiC films on Si. In the case of the SiC growth on Si, Si outdiffusion from the substrate occurred, leading to the formation of voids at the Si/SiC interface. We found that the formation of the AlN buffer layer was effective in preventing the Si outdiffusion during the SiC growth. In addition, the crystallinity and surface morphology of the SiC films on Si/AlN were superior to those of the SiC films on. Si. PLD was found to be effective in suppressing the formation of voids in the SiC films. The surface roughness and crystallinity of the films were improved by using PLD, compared with those of the CVD films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon carbide / Silicon / Chemical vapor deposition / Pulsed laser deposition |
| Paper # | CPM2012-34 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2012/8/1(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | Silicon |
| Keyword(3) | Chemical vapor deposition |
| Keyword(4) | Pulsed laser deposition |
| 1st Author's Name | Hideki NAKAZAWA |
| 1st Author's Affiliation | Faculty of Science and Engineering, Hirosaki University() |
| 2nd Author's Name | Daiki SUZUKI |
| 2nd Author's Affiliation | Faculty of Science and Engineering, Hirosaki University |
| 3rd Author's Name | Tsugutada NARITA |
| 3rd Author's Affiliation | Faculty of Science and Engineering, Hirosaki University |
| 4th Author's Name | Yohei YAMAMOTO |
| 4th Author's Affiliation | Faculty of Science and Engineering, Hirosaki University |
| Date | 2012-08-08 |
| Paper # | CPM2012-34 |
| Volume (vol) | vol.112 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |