Presentation	2012-08-08 Growth pressure dependence of SiC films grown by HWCVD at low substrate temperature Katsuya ABE, Takuu Syu, Tomohiko Yamakami,
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Abstract(in English)	SiC films were prepared at low substrate temperature with changing catalyst temperature and growth pressure by hot-wire CVD method using graphite catalysts coated with SiC. The silicon rich SiC films were easily grown in our experimental conditions. The film composition got close to stoichiometry with increasing growth pressure. Thus, it was confirmed from XRD and RHEED patterns that μc-SiC films were successfully obtained at the higher growth pressure of 6 Torr and low substrate temperature of 400℃. The growth mechanisms in gas phase and on growth surface were considered in order to explain the experimental results.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	HW-CVD / SiC / Low temperature growth
Paper #	CPM2012-33
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Committee	CPM
Conference Date	2012/8/1(1days)
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Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Growth pressure dependence of SiC films grown by HWCVD at low substrate temperature
Sub Title (in English)
Keyword(1)	HW-CVD
Keyword(2)	SiC
Keyword(3)	Low temperature growth
1st Author's Name	Katsuya ABE
1st Author's Affiliation	Faculty of Engineering, Shinshu University()
2nd Author's Name	Takuu Syu
2nd Author's Affiliation	Faculty of Engineering, Shinshu University
3rd Author's Name	Tomohiko Yamakami
3rd Author's Affiliation	Faculty of Engineering, Shinshu University
Date	2012-08-08
Paper #	CPM2012-33
Volume (vol)	vol.112
Number (no)	175
Page	pp.pp.-
#Pages	4
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