Presentation 2012-07-27
A Fully Integrated Triple-Band CMOS Power Amplifier for WCDMA Mobile Handsets
Kouichi Kanda, Yoichi Kawano, Takao Sasaki, Noriaki Shirai, Tetsuro Tamura, Shigeaki Kawai, Masahiro Kudo, Tomotoshi Murakami, Hiroyuki Nakamoto, Nobumasa Hasegawa, Hideki Kano, Akiko Mineyama, Kazuaki Oishi, Masashi Shima, Naoyoshi Tamura, Toshihide Suzuki, Toshihiko Mori, Kimitoshi Niratsuka, Shinji Yamaura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper describes a world-first triple-band (800MHz, 1.7GHz, and 2.0GHz) W-CDMA CMOS power amplifier with on-chip power and temperature sensors and a digital interface in a 3.5 x 4 x 0.7mm flip-chip package. Full integration of matching circuits eliminates off-chip matching components. The linear PA achieved 27.3dB gain, 28.5% PAE and 27.4dBm output power at -34dBc ACPR. With adaptive supply voltage and gate bias control, less than 20mA of DG09 average current is achieved..
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power amplifier / Multi-band / CMOS / 90nm / W-CDMA
Paper # ICD2012-28
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Committee ICD
Conference Date 2012/7/19(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Fully Integrated Triple-Band CMOS Power Amplifier for WCDMA Mobile Handsets
Sub Title (in English)
Keyword(1) Power amplifier
Keyword(2) Multi-band
Keyword(3) CMOS
Keyword(4) 90nm
Keyword(5) W-CDMA
1st Author's Name Kouichi Kanda
1st Author's Affiliation Fujitsu Laboratories LTD()
2nd Author's Name Yoichi Kawano
2nd Author's Affiliation Fujitsu Semiconductor
3rd Author's Name Takao Sasaki
3rd Author's Affiliation Fujitsu Semiconductor
4th Author's Name Noriaki Shirai
4th Author's Affiliation Fujitsu Semiconductor
5th Author's Name Tetsuro Tamura
5th Author's Affiliation Fujitsu Semiconductor
6th Author's Name Shigeaki Kawai
6th Author's Affiliation Fujitsu Semiconductor
7th Author's Name Masahiro Kudo
7th Author's Affiliation Fujitsu Semiconductor
8th Author's Name Tomotoshi Murakami
8th Author's Affiliation Fujitsu Semiconductor
9th Author's Name Hiroyuki Nakamoto
9th Author's Affiliation Fujitsu Laboratories LTD
10th Author's Name Nobumasa Hasegawa
10th Author's Affiliation Fujitsu Semiconductor
11th Author's Name Hideki Kano
11th Author's Affiliation Fujitsu Semiconductor
12th Author's Name Akiko Mineyama
12th Author's Affiliation Fujitsu Laboratories LTD
13th Author's Name Kazuaki Oishi
13th Author's Affiliation Fujitsu Laboratories LTD
14th Author's Name Masashi Shima
14th Author's Affiliation Fujitsu Semiconductor
15th Author's Name Naoyoshi Tamura
15th Author's Affiliation Fujitsu Semiconductor
16th Author's Name Toshihide Suzuki
16th Author's Affiliation Fujitsu Laboratories LTD
17th Author's Name Toshihiko Mori
17th Author's Affiliation Fujitsu Laboratories LTD
18th Author's Name Kimitoshi Niratsuka
18th Author's Affiliation Fujitsu Semiconductor
19th Author's Name Shinji Yamaura
19th Author's Affiliation Fujitsu Semiconductor
Date 2012-07-27
Paper # ICD2012-28
Volume (vol) vol.112
Number (no) 159
Page pp.pp.-
#Pages 6
Date of Issue