Presentation | 2012-07-26 Smart Power LSI Technology Development : High Performance and High Reliability BiC-DMOS Device Development Kenichi HATASAKO, Tetsuya NITTA, Masami HANE, Shigeto MAEGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper presents high performance and high reliability BiC-DMOS device development, which act as the driving force devices toward high efficiency and energy saving society. The development trend of mixed-signal LSI is presented. High performance device development by fine process technology and SOI technology is described. BEOL transistor is presented as high potential transistor, which use wide band-gap semiconductor InGaZnO (IGZO). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Mixed-signal LSI / BiC-DMOS / SOI / InGaZnO |
Paper # | ICD2012-23 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2012/7/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Smart Power LSI Technology Development : High Performance and High Reliability BiC-DMOS Device Development |
Sub Title (in English) | |
Keyword(1) | Mixed-signal LSI |
Keyword(2) | BiC-DMOS |
Keyword(3) | SOI |
Keyword(4) | InGaZnO |
1st Author's Name | Kenichi HATASAKO |
1st Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp.() |
2nd Author's Name | Tetsuya NITTA |
2nd Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp. |
3rd Author's Name | Masami HANE |
3rd Author's Affiliation | Advanced LSI Devices Research Renesas Electronics Corp. |
4th Author's Name | Shigeto MAEGAWA |
4th Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp. |
Date | 2012-07-26 |
Paper # | ICD2012-23 |
Volume (vol) | vol.112 |
Number (no) | 159 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |