| Presentation | 2012-07-26 Smart Power LSI Technology Development : High Performance and High Reliability BiC-DMOS Device Development Kenichi HATASAKO, Tetsuya NITTA, Masami HANE, Shigeto MAEGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents high performance and high reliability BiC-DMOS device development, which act as the driving force devices toward high efficiency and energy saving society. The development trend of mixed-signal LSI is presented. High performance device development by fine process technology and SOI technology is described. BEOL transistor is presented as high potential transistor, which use wide band-gap semiconductor InGaZnO (IGZO). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mixed-signal LSI / BiC-DMOS / SOI / InGaZnO |
| Paper # | ICD2012-23 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2012/7/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Smart Power LSI Technology Development : High Performance and High Reliability BiC-DMOS Device Development |
| Sub Title (in English) | |
| Keyword(1) | Mixed-signal LSI |
| Keyword(2) | BiC-DMOS |
| Keyword(3) | SOI |
| Keyword(4) | InGaZnO |
| 1st Author's Name | Kenichi HATASAKO |
| 1st Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp.() |
| 2nd Author's Name | Tetsuya NITTA |
| 2nd Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp. |
| 3rd Author's Name | Masami HANE |
| 3rd Author's Affiliation | Advanced LSI Devices Research Renesas Electronics Corp. |
| 4th Author's Name | Shigeto MAEGAWA |
| 4th Author's Affiliation | Mixed Signal Device Tech. Dept. Renesas Electronics Corp. |
| Date | 2012-07-26 |
| Paper # | ICD2012-23 |
| Volume (vol) | vol.112 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |