| Presentation | 2012-07-19 Flash memory : its principle of operation and current development issues Akira NISHIYAMA, Koichi Muraoka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Currently, flash memory is used in various electrical apparatus, such as smartphones, digital products, PCs and servers. Contrary to HDD and ODD, flash memory operates only by the movement of carriers inside the semiconductor devices; NOR-type uses hot electrons, while NAND-type uses FN tunneling electrons. The operation principle of both types is introduced along with their applications. And issues for the realization of Tbit density of NAND flash is explained along with their development direction. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash memory / NOR / NAND / Floating Gate |
| Paper # | MR2012-11 |
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| Conference Information | |
| Committee | MR |
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| Conference Date | 2012/7/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Magnetic Recording (MR) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Flash memory : its principle of operation and current development issues |
| Sub Title (in English) | |
| Keyword(1) | Flash memory |
| Keyword(2) | NOR |
| Keyword(3) | NAND |
| Keyword(4) | Floating Gate |
| 1st Author's Name | Akira NISHIYAMA |
| 1st Author's Affiliation | Corporate R&D Center, Toshiba Corp.() |
| 2nd Author's Name | Koichi Muraoka |
| 2nd Author's Affiliation | Corporate R&D Center, Toshiba Corp. |
| Date | 2012-07-19 |
| Paper # | MR2012-11 |
| Volume (vol) | vol.112 |
| Number (no) | 137 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |