| Presentation | 2012-07-26 Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs Maiko HATANO, Yuya TANIGUCHI, Hirokuni TOKUDA, Masaaki KUZUHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present DC characteristics of AlGaN/GaN MIS HEMTs and discuss the effects of post annealing on the DC performance. The threshold voltage exhibited a negative shift for HEMTs annealed at 500℃ before gate metal deposition. On the other hand, the device annealed after gate metal deposition exhibited a positive shift in threshold voltage and a decrease in leakage current. These results suggest that metal/Al_2O_3 interface barrier height was increased by annealing after gate metal deposition. Without affecting the value of R_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / HEMT / annealing effect |
| Paper # | ED2012-41 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/7/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | HEMT |
| Keyword(3) | annealing effect |
| 1st Author's Name | Maiko HATANO |
| 1st Author's Affiliation | Graduate School of Engineering, University of Fukui() |
| 2nd Author's Name | Yuya TANIGUCHI |
| 2nd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| 3rd Author's Name | Hirokuni TOKUDA |
| 3rd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| 4th Author's Name | Masaaki KUZUHARA |
| 4th Author's Affiliation | Graduate School of Engineering, University of Fukui |
| Date | 2012-07-26 |
| Paper # | ED2012-41 |
| Volume (vol) | vol.112 |
| Number (no) | 154 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |