| Presentation | 2012-07-26 An S-Band 170W/70% Partially-Matched GaN HEMT Power Amplifier : Efficiency Increase by Harmonic Termination for GaN-on-Si Device N. KOSAKA, H. UCHIDA, H. NOTO, K. YAMANAKA, M. NAKAYAMA, Y. HIRANO, A. INOUE, Y. NOGAMI, Y. KANAYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An S-band partially-matched GaN HEMT power amplifier (PA) is reported. It employs a GaN-on-Si FET to which much attention has been paid for its high output power characteristics and its low manufacturing cost. With a proper choice of gate width of the FET and harmonic termination at both the input and the output, output power of 170W and drain efficiency of 70% have been obtained at 2.1GHz. To the authors' knowledge, the efficiency at aforementioned output level and the frequency seems one of the highest among ever-reported ones. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / silicon / amplifier / harmonic termination / S-band |
| Paper # | MW2012-28,OPE2012-21,EST2012-10,MWP2012-9 |
| Date of Issue |
| Conference Information | |
| Committee | EST |
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| Conference Date | 2012/7/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Simulation Technology (EST) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An S-Band 170W/70% Partially-Matched GaN HEMT Power Amplifier : Efficiency Increase by Harmonic Termination for GaN-on-Si Device |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | silicon |
| Keyword(3) | amplifier |
| Keyword(4) | harmonic termination |
| Keyword(5) | S-band |
| 1st Author's Name | N. KOSAKA |
| 1st Author's Affiliation | Mitsubishi Electric Corporation() |
| 2nd Author's Name | H. UCHIDA |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation |
| 3rd Author's Name | H. NOTO |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation |
| 4th Author's Name | K. YAMANAKA |
| 4th Author's Affiliation | Mitsubishi Electric Corporation |
| 5th Author's Name | M. NAKAYAMA |
| 5th Author's Affiliation | Mitsubishi Electric Corporation |
| 6th Author's Name | Y. HIRANO |
| 6th Author's Affiliation | Mitsubishi Electric Corporation |
| 7th Author's Name | A. INOUE |
| 7th Author's Affiliation | Mitsubishi Electric Corporation |
| 8th Author's Name | Y. NOGAMI |
| 8th Author's Affiliation | Mitsubishi Electric Corporation |
| 9th Author's Name | Y. KANAYA |
| 9th Author's Affiliation | Mitsubishi Electric Corporation |
| Date | 2012-07-26 |
| Paper # | MW2012-28,OPE2012-21,EST2012-10,MWP2012-9 |
| Volume (vol) | vol.112 |
| Number (no) | 157 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |