Presentation 2012-06-22
Development of Green Semiconductor Lasers
Katsumi KISHINO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recent developments of green light semiconductor lasers based on GaInN nitride semiconductors, GaInN nanocolumns, and Be containing II-VI semiconductors are described.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Green light lasers / Nitride Semiconductors / Be containing II-VI Semiconductors / GaInN / Nanocolumns
Paper # OPE2012-17,LQE2012-21
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Conference Information
Committee LQE
Conference Date 2012/6/15(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Green Semiconductor Lasers
Sub Title (in English)
Keyword(1) Green light lasers
Keyword(2) Nitride Semiconductors
Keyword(3) Be containing II-VI Semiconductors
Keyword(4) GaInN
Keyword(5) Nanocolumns
1st Author's Name Katsumi KISHINO
1st Author's Affiliation Faculty of Science & Engineering, Sophia University:Sophia Nanotechnology Research Center, Sophia University()
Date 2012-06-22
Paper # OPE2012-17,LQE2012-21
Volume (vol) vol.112
Number (no) 99
Page pp.pp.-
#Pages 6
Date of Issue