Presentation | 2012-06-22 GHz response of a Si photodiode fabricated by 0.35μm BiCMOS process Kazuaki MAEKITA, Toshiyuki SHIMOTORI, Takeo MARUYAMA, Koichi IIYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We fabricated silicon photodiode with standard 0.35μm bipolar complementary metal-oxide-semiconductor process for optical interconnect applications. The devices were measured at 650 nm wavelength. The dark current of 2.6 nA and the breakdown voltage of 13 V were obtained. The avaranche breakdown occurred at bias voltage of 13 V. The maximum sensitivity was 2.77 A/W at the bias voltage of 13.7 V (the avaranche gain of 25). The 3-dB bandwidth of 1 GHz was obtained at the bias voltage of 13.3 V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si / BiCMOS / Photodiode / OEICs / High frequency response |
Paper # | OPE2012-13,LQE2012-17 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2012/6/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | GHz response of a Si photodiode fabricated by 0.35μm BiCMOS process |
Sub Title (in English) | |
Keyword(1) | Si |
Keyword(2) | BiCMOS |
Keyword(3) | Photodiode |
Keyword(4) | OEICs |
Keyword(5) | High frequency response |
1st Author's Name | Kazuaki MAEKITA |
1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
2nd Author's Name | Toshiyuki SHIMOTORI |
2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
3rd Author's Name | Takeo MARUYAMA |
3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
4th Author's Name | Koichi IIYAMA |
4th Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
Date | 2012-06-22 |
Paper # | OPE2012-13,LQE2012-17 |
Volume (vol) | vol.112 |
Number (no) | 99 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |