Presentation 2012-06-22
GHz response of a Si photodiode fabricated by 0.35μm BiCMOS process
Kazuaki MAEKITA, Toshiyuki SHIMOTORI, Takeo MARUYAMA, Koichi IIYAMA,
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Abstract(in English) We fabricated silicon photodiode with standard 0.35μm bipolar complementary metal-oxide-semiconductor process for optical interconnect applications. The devices were measured at 650 nm wavelength. The dark current of 2.6 nA and the breakdown voltage of 13 V were obtained. The avaranche breakdown occurred at bias voltage of 13 V. The maximum sensitivity was 2.77 A/W at the bias voltage of 13.7 V (the avaranche gain of 25). The 3-dB bandwidth of 1 GHz was obtained at the bias voltage of 13.3 V.
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Keyword(in English) Si / BiCMOS / Photodiode / OEICs / High frequency response
Paper # OPE2012-13,LQE2012-17
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Committee LQE
Conference Date 2012/6/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GHz response of a Si photodiode fabricated by 0.35μm BiCMOS process
Sub Title (in English)
Keyword(1) Si
Keyword(2) BiCMOS
Keyword(3) Photodiode
Keyword(4) OEICs
Keyword(5) High frequency response
1st Author's Name Kazuaki MAEKITA
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Toshiyuki SHIMOTORI
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Takeo MARUYAMA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
4th Author's Name Koichi IIYAMA
4th Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
Date 2012-06-22
Paper # OPE2012-13,LQE2012-17
Volume (vol) vol.112
Number (no) 99
Page pp.pp.-
#Pages 4
Date of Issue