Presentation 2012-06-22
Demonstration on 20 Gbit/s Direct Modulation of 1.3-μm-Range Metamorphic Laser
Masakazu ARAI, Shigeru KANAZAWA, Takashi TADOKORO, Masaki KOHTOKU,
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Abstract(in English) There is a strong demand for the efficient use of electric power in telecom and Ethernet systems. We use metamorphic growth technology to increase the flexibility when choosing materials with lattice constants different from that of InP with the aim of realizing improved carrier confinement under high temperature. In this report, we demonstrated a 20 Gbit/s direct modulation with clear eye opening at the temperature between 25 and 85℃. In addition, to increase the temperature characteristics, we introduced electron stopper layer in p-cladding. This laser exhibits a 1.3-μm-range operation with high characteristic temperature (T_0=220K) and high operating temperature (200℃). These results show that a laser with a metamorphic buffer on a GaAs substrate is a good candidate as an uncooled light source with a low power consumption.
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Keyword(in English) Semiconductor laser / Temperature characteristics / Metamorphic
Paper # OPE2012-11,LQE2012-15
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Committee LQE
Conference Date 2012/6/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Demonstration on 20 Gbit/s Direct Modulation of 1.3-μm-Range Metamorphic Laser
Sub Title (in English)
Keyword(1) Semiconductor laser
Keyword(2) Temperature characteristics
Keyword(3) Metamorphic
1st Author's Name Masakazu ARAI
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Shigeru KANAZAWA
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Takashi TADOKORO
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
4th Author's Name Masaki KOHTOKU
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2012-06-22
Paper # OPE2012-11,LQE2012-15
Volume (vol) vol.112
Number (no) 99
Page pp.pp.-
#Pages 4
Date of Issue