Presentation 2012-05-25
Theoretical Analysis of Intensity and Frequency Noises in Semiconductor Optical Amplifier
Minoru YAMADA,
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Abstract(in English) A theoretical analysis of the intensity and the frequency noise in semiconductor optical amplifiers (SOA) is given. Amplification of a traveling optical wave is formulated associating with fluctuations on the optical intensity, the optical phase and the electron numbers based on the classical wave-equation and quantum mechanical modification. Inclusion of the amplified spontaneous emission generated in the SOA is also taken into account. Amounts of noise are expressed in terms of the relative intensity noise (RIN), the spectrum line-width and the frequency noise (FM noise). Sensitive dependency of the RIN property on the optical input power is theoretically explained. The RIN increases after passing the SOA when the optical input power is small enough, but decreases when the optical input power is rather high. On the while, the spectrum line-width is found to be scarcely changed from the input light for conventional operation of the SOA.
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Keyword(in English) Semiconductor optical amplifiers / Noise / Line-width / Semiconductor lasers
Paper # LQE2012-11
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Conference Information
Committee LQE
Conference Date 2012/5/18(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Analysis of Intensity and Frequency Noises in Semiconductor Optical Amplifier
Sub Title (in English)
Keyword(1) Semiconductor optical amplifiers
Keyword(2) Noise
Keyword(3) Line-width
Keyword(4) Semiconductor lasers
1st Author's Name Minoru YAMADA
1st Author's Affiliation Faculty of Electrical and Computer Engineering, Institute of Science and Engineering, Kanazawa University()
Date 2012-05-25
Paper # LQE2012-11
Volume (vol) vol.112
Number (no) 62
Page pp.pp.-
#Pages 6
Date of Issue