| Presentation | 2012-05-18 H_2O_2 Treatment of the Cu_2O Thin Films deposited by the Electrochemical method Ying Song, M. Ichimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Cu_2O is considered to be promising as an absorber layer material of solar cells, but its band gap is larger than the optimum one. Therefore, we attempted to oxidize Cu_2O using H_2O_2 to increase oxygen ratio and decrease band gap. Cu_2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO_4, lactic acid and KOH by the galvanostatic electrochemical deposition at 40℃ with current density of -1mA/cm^2. Then, the as-prepared copper oxide thin film was dipped in H_2O_2 (30%) at 90℃ to oxidize for 10, 20 or 30 minutes. By the H_2O_2 treatment, the oxygen content was increased, and the band gap was decreased. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu_2O thin film / H_2O_2 treatment / photo-absorption / composition ratio |
| Paper # | ED2012-35,CPM2012-19,SDM2012-37 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | H_2O_2 Treatment of the Cu_2O Thin Films deposited by the Electrochemical method |
| Sub Title (in English) | |
| Keyword(1) | Cu_2O thin film |
| Keyword(2) | H_2O_2 treatment |
| Keyword(3) | photo-absorption |
| Keyword(4) | composition ratio |
| 1st Author's Name | Ying Song |
| 1st Author's Affiliation | Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology() |
| 2nd Author's Name | M. Ichimura |
| 2nd Author's Affiliation | Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology |
| Date | 2012-05-18 |
| Paper # | ED2012-35,CPM2012-19,SDM2012-37 |
| Volume (vol) | vol.112 |
| Number (no) | 34 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |