| Presentation | 2012-05-18 Growth and characterization of strained Ge epitaxial layers on SiGe substrates Takashi YAMAHA, Osamu NAKATSUKA, Kyoichi KINOSHITA, Shinichi YODA, Shigeaki ZAIMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to improve on the performance of Si ULSI, biaxially strained Ge channel is expected to be a high mobility channel material. We demonstrate the fabrication of a biaxially compressive strained Ge heteroepitaxial layer on a Si_<1-x>Ge_x substrate. The strain value of the compressive strained Ge layer is estimated to be 1.3% with x-ray diffraction and micro Raman spectroscopy. The degree of strain relaxation for the Ge layer is also estimated to be 38%. We also prepared strained Ge layers on a Si_<1-x>Ge_x layer-on-insulator structure which is formed with solid-phase mixing method for comparison, and investigated the mosaicity and surface roughness of strained Ge layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon germanium / germanium / strain |
| Paper # | ED2012-32,CPM2012-16,SDM2012-34 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and characterization of strained Ge epitaxial layers on SiGe substrates |
| Sub Title (in English) | |
| Keyword(1) | silicon germanium |
| Keyword(2) | germanium |
| Keyword(3) | strain |
| 1st Author's Name | Takashi YAMAHA |
| 1st Author's Affiliation | Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Osamu NAKATSUKA |
| 2nd Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Kyoichi KINOSHITA |
| 3rd Author's Affiliation | Institute of Space and Astronautical Science |
| 4th Author's Name | Shinichi YODA |
| 4th Author's Affiliation | Institute of Space and Astronautical Science |
| 5th Author's Name | Shigeaki ZAIMA |
| 5th Author's Affiliation | Graduate School of Engineering, Nagoya University |
| Date | 2012-05-18 |
| Paper # | ED2012-32,CPM2012-16,SDM2012-34 |
| Volume (vol) | vol.112 |
| Number (no) | 34 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |