| Presentation | 2012-05-18 Evaluation of GaN substrates for vertical GaN power device applications Tetsu KACHI, Tsutomu UESUGI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effects of dislocations in GaN substrates to leakage current have been evaluated using pn and Shottky diodes. The results revealed that the edge dislocations and mix dislocations don't induce the leakage current even at > 1kV reverse bias. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN substrate / threading dislocation / edge dislocation / mix dislocation / leakage current |
| Paper # | ED2012-28,CPM2012-12,SDM2012-30 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of GaN substrates for vertical GaN power device applications |
| Sub Title (in English) | |
| Keyword(1) | GaN substrate |
| Keyword(2) | threading dislocation |
| Keyword(3) | edge dislocation |
| Keyword(4) | mix dislocation |
| Keyword(5) | leakage current |
| 1st Author's Name | Tetsu KACHI |
| 1st Author's Affiliation | Toyota Central R&D Labs., Inc.() |
| 2nd Author's Name | Tsutomu UESUGI |
| 2nd Author's Affiliation | Toyota Central R&D Labs., Inc. |
| Date | 2012-05-18 |
| Paper # | ED2012-28,CPM2012-12,SDM2012-30 |
| Volume (vol) | vol.112 |
| Number (no) | 32 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |