Presentation 2012-05-18
Electrodeposition of Ga_2O_3 Thin Films from Aqueous Gallium Sulfate Solutions
Junie Jhon M. VEQUIZO, Masaya ICHIMURA,
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Abstract(in English) Gallium oxide (Ga_2O_3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulfate solution with small amount of Na_2S_2O_3 and H2O_2. Effects of different deposition parameters such as deposition voltage, amount of H_2O_2 and deposition time were investigated and presented in this report. Sulfur peak could appear in the Auger electron spectroscopy (AES) spectra of the films deposited using Ga_2(SO_4)_3-Na_2S2O_3-H_2O_2 solution depending on the applied voltage and deposition time. As-deposited films showed oxygen-rich characteristics as evident in the AES result. The films exhibited n-type conductivity and good photosensitivity from photoelectrochemical measurement.
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Keyword(in English) Gallium oxide / electrodeposition / AES / photoelectrochemical measurement
Paper # ED2012-34,CPM2012-18,SDM2012-36
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Committee CPM
Conference Date 2012/5/10(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrodeposition of Ga_2O_3 Thin Films from Aqueous Gallium Sulfate Solutions
Sub Title (in English)
Keyword(1) Gallium oxide
Keyword(2) electrodeposition
Keyword(3) AES
Keyword(4) photoelectrochemical measurement
1st Author's Name Junie Jhon M. VEQUIZO
1st Author's Affiliation Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology()
2nd Author's Name Masaya ICHIMURA
2nd Author's Affiliation Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology
Date 2012-05-18
Paper # ED2012-34,CPM2012-18,SDM2012-36
Volume (vol) vol.112
Number (no) 33
Page pp.pp.-
#Pages 5
Date of Issue