| Presentation | 2012-05-17 Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate Hironari ITO, Keisuke KUMAGAI, Hiroto SEKIGUCHI, Hiroshi OKADA, Akihiro WAKAHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaPN alloys are expected as a cladding layer for Si based monolithic laser structure in optoelectronic integrated circuit. Electrical properties of AlGaPN alloys grown by solid source molecular beam epitaxy have been investigated by Hall effect measurement. In n-type AlGaPN, the decrease of electron concentration with increasing N composition is improved as compared with n-type GaPN. In p-type AlGaPN, the alloy scattering is dominant near the room temperature, and activation energy of the acceptor is the same level in p-type GaPN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | OEIC / III-V-N alloy / AlGaPN / doping |
| Paper # | ED2012-19,CPM2012-3,SDM2012-21 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | OEIC |
| Keyword(2) | III-V-N alloy |
| Keyword(3) | AlGaPN |
| Keyword(4) | doping |
| 1st Author's Name | Hironari ITO |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Keisuke KUMAGAI |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Hiroto SEKIGUCHI |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Hiroshi OKADA |
| 4th Author's Affiliation | Toyohashi University of Technology, EIIRIS:Toyohashi University of Technology |
| 5th Author's Name | Akihiro WAKAHARA |
| 5th Author's Affiliation | Toyohashi University of Technology |
| Date | 2012-05-17 |
| Paper # | ED2012-19,CPM2012-3,SDM2012-21 |
| Volume (vol) | vol.112 |
| Number (no) | 33 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |