| Presentation | 2012-05-18 Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji YATABE, Yujin HORI, Sungsik KIM, Tamotsu HASHIZUME, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure. ICP-assisted plasma with Cl_2/BCl_3 gas mixture was used for the dry etching. After the dry etching, we fabricated an Al_2O_3-insulated gate on AlGaN/GaN surface by atomic layer depositon (ALD). To characterize the interface properties of Al_2O_3/AlGaN, we performed standard capacitance-voltage (C-V) measurements and photo-assisted method. The lager threshold voltage shift due to the photo-assisted electron emission indicated that the ICP etching leads to an increase the Al_2O_3/AlGaN interface states density. From the X-ray photoelectron spectroscopy, we observed that the ICP process induced the nitrogen vacancy at the AlGaN surface, causing high-density of electron states at Al_2O_3/AlGaN interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dryetching / ICP / AlGaN / MOS / Al_2O_3 / C-V / interface state |
| Paper # | ED2012-27,CPM2012-11,SDM2012-29 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces |
| Sub Title (in English) | |
| Keyword(1) | dryetching |
| Keyword(2) | ICP |
| Keyword(3) | AlGaN |
| Keyword(4) | MOS |
| Keyword(5) | Al_2O_3 |
| Keyword(6) | C-V |
| Keyword(7) | interface state |
| 1st Author's Name | Zenji YATABE |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Yujin HORI |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Sungsik KIM |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2012-05-18 |
| Paper # | ED2012-27,CPM2012-11,SDM2012-29 |
| Volume (vol) | vol.112 |
| Number (no) | 34 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |