Presentation 2012-05-17
Preparation and evaluation of Ga_2O_3 oxygen sensors
Masaaki Isai, Takahiro Yamamoto, Takuma Torii,
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Abstract(in English) Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. The Ga_2O_3 has an oxygen detection characteristic at more than 900℃, so this material attracts much attention as an oxygen sensor at high temperature. The β-Ga_2O_3 films were prepared by the RF magnetron sputtering method. The influence of the two kinds of substrates, namely Si(100) and quartz to compare on the oxygen detection properties was evaluated. It was found that the oxygen gas sensor fabricated on a quartz substrate had superior oxygen detection characteristics than that fabricated on a Si substrate..
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Gallium oxide / Metal oxides / Magnetron sputtering method / Rapid thermal annealing (RTA) / Oxygen sensor
Paper # ED2012-25,CPM2012-9,SDM2012-27
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Committee SDM
Conference Date 2012/5/10(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation and evaluation of Ga_2O_3 oxygen sensors
Sub Title (in English)
Keyword(1) Gallium oxide
Keyword(2) Metal oxides
Keyword(3) Magnetron sputtering method
Keyword(4) Rapid thermal annealing (RTA)
Keyword(5) Oxygen sensor
1st Author's Name Masaaki Isai
1st Author's Affiliation Faculty of Engineering, Shizuoka University()
2nd Author's Name Takahiro Yamamoto
2nd Author's Affiliation Graduate School of Engineering, Shizuoka University
3rd Author's Name Takuma Torii
3rd Author's Affiliation Faculty of Engineering, Shizuoka University
Date 2012-05-17
Paper # ED2012-25,CPM2012-9,SDM2012-27
Volume (vol) vol.112
Number (no) 34
Page pp.pp.-
#Pages 4
Date of Issue