| Presentation | 2012-05-17 Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi FUKAMI, Noriyuki URAKAMI, Hiroto SEKIGUCHI, Hiroshi OKADA, Akihiro WAKAHARA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with GaAsN grown at 460℃, localization energy in GaAsN grown at 600℃ decrease about 2/3. The low energy tail from GaAsN grown at 600℃ is smaller than the one from the sample grown at 460℃. These results indicate that potential fluctuations are reduced and carrier localization can be suppressed by high temperature growth. Thermal quenching of Photoluminescence integral intensity for the samples grown at 600℃ is decrease compared to those of grown at 460℃. This result suggests that point defects are inhibited by high growth temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | OEIC / GaAsN / Molecular beam epitaxy / III-V-N alloy |
| Paper # | ED2012-18,CPM2012-2,SDM2012-20 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2012/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in crystalline quality of GaAsN alloy by high temperature growth |
| Sub Title (in English) | |
| Keyword(1) | OEIC |
| Keyword(2) | GaAsN |
| Keyword(3) | Molecular beam epitaxy |
| Keyword(4) | III-V-N alloy |
| 1st Author's Name | Futoshi FUKAMI |
| 1st Author's Affiliation | Department of Electrical and Electronic Information Engineering, Toyohashi technology of University() |
| 2nd Author's Name | Noriyuki URAKAMI |
| 2nd Author's Affiliation | Department of Electrical and Electronic Information Engineering, Toyohashi technology of University |
| 3rd Author's Name | Hiroto SEKIGUCHI |
| 3rd Author's Affiliation | Department of Electrical and Electronic Information Engineering, Toyohashi technology of University |
| 4th Author's Name | Hiroshi OKADA |
| 4th Author's Affiliation | Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi technology of University |
| 5th Author's Name | Akihiro WAKAHARA |
| 5th Author's Affiliation | Department of Electrical and Electronic Information Engineering, Toyohashi technology of University |
| Date | 2012-05-17 |
| Paper # | ED2012-18,CPM2012-2,SDM2012-20 |
| Volume (vol) | vol.112 |
| Number (no) | 34 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |